PART |
Description |
Maker |
EM44BM1684LBB-3F |
512Mb (8M隆驴4Bank隆驴16) Double DATA RATE 2 SDRAM 512Mb (8M×4Bank×16) Double DATA RATE 2 SDRAM
|
Eorex Corporation
|
EM42AM3284LBC-6F EM42AM3284LBC-6FE EM42AM3284LBC-7 |
512Mb (4M×4Bank×32) Double DATA RATE SDRAM
|
Eorex Corporation
|
K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误 512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb(x8/x16.8/3V28字节页)NAND闪存以及256/512Mb(x16/x32.8V的)LPSDRAM的MCP
|
意法半导 STMicroelectronics N.V.
|
HYS72D64320HU-6-C HYS64D16301GU5C HYS64D16301GU-5- |
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank 184-Pin Unbuffered Double Data Rate SDRAM
|
INFINEON[Infineon Technologies AG]
|
NAND01G-M NAND256-M NAND256R3M0 NAND256R3M0AZB5E N |
SPECIALTY MEMORY CIRCUIT, PBGA149 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
|
NUMONYX STMICROELECTRONICS[STMicroelectronics]
|
HYS72D32000GU-7-A HYS64D32000GU-7-A HYS72D64020GU- |
256MB (32Mx64) PC2100 1-bank 512MB (64Mx72) PC2100 2-bank 512MB (64Mx64) PC2100 2-bank 512MB (64Mx72) PC1600 2-bank 256MB (32Mx72) PC1600 1-bank End-of-Life 512MB (64Mx64) PC1600 2-bank 12MB的(64Mx64)PC1600 2银行 256MB (32Mx72) PC2100 1-bank 56MB的(32Mx72)PC2100 1银行
|
Infineon Technologies AG
|
HYB25D512160BE-5 HYB25D512800BC-5 HYB25D512800BE-5 |
DDR SDRAM Components - 512Mb (32Mx16) DDR400 (3-3-3) DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR400 (3-3-3) DDR SDRAM Components - 512Mb (64Mx8) DDR400 (3-3-3) DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb FBGA (128Mx4) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (64Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (128Mx4) DDR266A (2-3-3)
|
Infineon
|
EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒 512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a> 128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
NX3DV42GM NX3DV42GU |
Dual high-speed USB 2.0 double-pole double-throw analog
|
NXP Semiconductors
|
1300940220 |
Standard Duty Support Grip, Double Eye, Closed Mesh, Double Weave
|
Molex Electronics Ltd.
|
1300940226 |
Standard Duty Support Grip, Double Eye, Closed Mesh, Double Weave
|
Molex Electronics Ltd.
|